Widely Wavelength-selective Al2O3:Er 3+ Ring Laser
نویسندگان
چکیده
Integrated Al2O3:Er 3+ channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling intoand low output power coupling fromthe ring is achieved in a straightforward design. Wavelength selection in the range 1532 to 1557 nm was demonstrated by varying the length of the output coupler from the ring. Keywords—waveguide laser; ring laser; erbium-doped laser; aluminum oxide
منابع مشابه
On-chip Integrated Amplifiers and Lasers Utilizing Rare-earth-ion Activation
This contribution reviews our recent results on rare-earth-ion-doped integrated amplifiers and lasers. We have concentrated our efforts on complex-doped polymers [1], amorphous Al2O3 [2], and crystalline potassium double tungstates [3]. A polymer host material, based on a cycloaliphatic diepoxy cured with a fluorinated dianhydride, has been developed [4]. When activated with the rare-earth-ion-...
متن کاملSingle-Frequency, Narrow-Linewidth Distributed Feedback Waveguide Laser in Al2O3:Er 3+ on Silicon
A distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a silicon substrate is reported. The optically pumped laser has a threshold pump power of 15 mW and emits 3 mW in single-frequency operation at 1545.2 nm wavelength with a slope efficiency of 6.2% and linewidth of 15 kHz. Keywords—Distributed feedback (DFB) laser; waveguide laser; erbium-doped laser; Bragg gratings...
متن کاملRare - Earth Doped Aluminum Oxide Lasers for Silicon Photonics by Emir Salih Magden
A reliable and CMOS-compatible deposition process for amorphous Al2O3 based active photonic components has been developed. Al2O3 films were reactively sputtered, where process optimization was achieved at a temperature of 250 C, with a deposition rate of 8.5 nm/min. With a surface roughness of 0.3 nm over a 1 μm area, background optical losses as low as 0.1 dB/cm were obtained for undoped films...
متن کاملOn-chip integrated lasers in Al2O3:Er on silicon
Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 10 cm. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 10 cm, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak ...
متن کاملThulium Doped Fibre Laser based on Theta Cavity Lasing Direction Rectification
The development of thulium-doped fibre lasers (TDFL) is motivated by numerous potential applications in spectroscopy, remote sensing, medicine, material processing, and telecommunications. The all-fibre corepumped ring cavity TDFLs exploiting fiberized grating-based filter [1] or Fabry-Pérot etalon [2] as a wavelength selective element were reported. An optical isolator should be inserted into ...
متن کامل